Accession Number:

ADA551379

Title:

Investigation of the Effect of Temperature During Off-State Degradation of AlGaN/GaN High Electron Mobility Transistors

Descriptive Note:

Journal article

Corporate Author:

FLORIDA UNIV GAINESVILLE DEPT OF MATERIALS SCIENCE AND ENGINEERING

Personal Author(s):

• Douglas, E. A.
• Chang, C. Y.
• Gila, B. P.
• Holzworth, M. R.
• Jones, K. S.
• Liu, L.
• Kim, Jinhyung
• Jang, Soohwan
• Via, G. D.
• Ren, F.
• Pearton, S. J.

Report Date:

2011-09-01

Pagination or Media Count:

7.0

Abstract:

AlGaNGaN High Electron Mobility Transistors were found to exhibit a negative temperature dependence of the critical voltage Vsub CRI for irreversible device degradation to occur during bias-stressing. At elevated temperatures, devices exhibited similar gate leakage currents before and after biasing to VCRI, independent of both stress temperature and critical voltage. Though no crack formation was observed after stress cross-sectional TEM indicates a breakdown in the oxide interfacial layer due to high reverse gate bias.

Descriptors:

• *ALUMINUM GALLIUM NITRIDES
• *GALLIUM NITRIDES
• *HIGH ELECTRON MOBILITY TRANSISTORS
• *THERMAL PROPERTIES
• *VOLTAGE
• CRACKS
• CURRENTS
• DEGRADATION
• GATES(CIRCUITS)
• HIGH TEMPERATURE
• IRREVERSIBLE PROCESSES
• OXIDES
• STRESSES

Subject Categories:

• Inorganic Chemistry
• Electrical and Electronic Equipment
• Thermodynamics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE