Identification and Carrier Dynamics of the Dominant Lifetime Limiting Defect in n(-) 4H-SiC Epitaxial Layers
NAVAL RESEARCH LAB WASHINGTON DC
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Wide bandgap semiconductors are of great current interest, as their material properties high thermal conductivity, high breakdown voltage, high thermal stability and chemical inertness make them ideal for applications that demand high power andor high frequency operation that is well beyond the limitations of Si-based technology. Consequently, there is much interest in these systems for high power solid-state switching and communications applications. As a result, much research has been carried out in the direct-gap GaN and GaNAlGaN systems for high power, high frequency microwave transistors and in SiC indirect band gap for high power bipolar switching devices.
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