Accession Number:

ADA550180

Title:

Properties of the State of the Art of Bulk III-V Nitride Substrates and Homoepitaxial Layers

Descriptive Note:

Journal article

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC ELECTRONICS SCIENCE AND TECHNOLOGY DIV

Personal Author(s):

Report Date:

2010-01-01

Pagination or Media Count:

14.0

Abstract:

The technological importance of III-V nitride semiconductors relies on their variety of applications, which cover optical, optoelectronic and electronic devices capable of operating under extreme values of current, voltage and temperature. The major roadblock for full realization of the potential of nitride semiconductors is still the availability of affordable large-area and high-quality native substrates with controlled electrical properties. Despite the impressive accomplishments recently achieved by techniques such as hydride vapour phase epitaxy and ammonothermal for GaN and sublimation for AlN, much more must be attained before establishing a bulk growth technique of choice to grow these materials. A brief review of the structural, optical and electronic properties of the state of the art of bulk and thick-film quasi-bulk nitride substrates and homoepitaxial films is presented, and a few device applications are also highlighted.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE