Accession Number:

ADA550177

Title:

Effect of Threading Screw and Edge Dislocations on Transport Properties of 4H-SiC Homoepitaxial Layers

Descriptive Note:

Journal article

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC

Report Date:

2010-01-01

Pagination or Media Count:

7.0

Abstract:

Local recombination properties of threading screw and edge dislocations in 4H SiC epitaxial layers have been studied using electron beam induced current EBIC. The minority carrier diffusion length in the vicinity of dislocations was found to vary with dislocation type. Screw dislocations had a more pronounced impact on diffusion length than the edge dislocations, evidencing stronger recombination activity. Temperature dependence of EBIC contrast of dislocations suggests that their recombination activity is controlled by deep energy levels in the vicinity of dislocation cores. This paper shows that the type of dislocation screw or edge can be identified from analysis of EBIC contrast.

Subject Categories:

  • Inorganic Chemistry

Distribution Statement:

APPROVED FOR PUBLIC RELEASE