Accession Number:

ADA548346

Title:

Epitaxial Growths of m-Plane AlGaN/GaN and AlInN/GaN Heterostructures Applicable for Normally-Off Mode High Power Field Effect Transistors on Freestanding GaN Substrates

Descriptive Note:

Final technical rept.

Corporate Author:

TOHOKU UNIV SENDAI (JAPAN) INST OF MULTIDISCIPLINARY RESEARCH FOR ADVANCED MATERIALS (IMRAM)

Personal Author(s):

Report Date:

2011-08-17

Pagination or Media Count:

0.0

Abstract:

Non-polar m-plane AlxGa1-xN and Al1-xInxN alloy films and heterostructures were grown by metalorganic vapor phase epitaxy MOVPE in order to obtain fundamental understandings on the growth of m-plane nitrides and carrier transport mechanisms. These alloys are being investigated for potential use in normally-off heterojunction field effect transistors HFETs.

Subject Categories:

  • Metallurgy and Metallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE