Epitaxial Growths of m-Plane AlGaN/GaN and AlInN/GaN Heterostructures Applicable for Normally-Off Mode High Power Field Effect Transistors on Freestanding GaN Substrates
Final technical rept.
TOHOKU UNIV SENDAI (JAPAN) INST OF MULTIDISCIPLINARY RESEARCH FOR ADVANCED MATERIALS (IMRAM)
Pagination or Media Count:
Non-polar m-plane AlxGa1-xN and Al1-xInxN alloy films and heterostructures were grown by metalorganic vapor phase epitaxy MOVPE in order to obtain fundamental understandings on the growth of m-plane nitrides and carrier transport mechanisms. These alloys are being investigated for potential use in normally-off heterojunction field effect transistors HFETs.
- Metallurgy and Metallography