Accession Number:

ADA547984

Title:

Study on the Hydrogenated ZnO-Based Thin Film Transistors. Part 1

Descriptive Note:

Final rept.

Corporate Author:

GWANGJU INST OF SCIENCE AND TECHNOLOGY (SOUTH KOREA)

Personal Author(s):

Report Date:

2011-04-30

Pagination or Media Count:

17.0

Abstract:

In Part I of this project, attempts to develop low capacitance, depletion-mode ZnO-based thin-film transistors TFTs were studied using two approaches. The first approach used elevated substrate temperature growth of a-IGZO channel layers, but most of the devices exhibited enhancement-mode operation. The second approach studied the effect of hydrogenation of a-IGZO channel layers during post-annealing. Even though the device quality improved, depletion-mode operation was not achieved. Depletion-mode operation was achieved in Part II of this project to be reported separately.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE