Accession Number:

ADA538250

Title:

Optical and Electrical Characterization of Melt-Grown Bulk Indium Gallium Arsenide and Indium Arsenic Phosphide Alloys

Descriptive Note:

Doctoral thesis

Corporate Author:

AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH SCHOOL OF ENGINEERING AND MANAGEMENT

Personal Author(s):

Report Date:

2011-03-01

Pagination or Media Count:

160.0

Abstract:

A new method to determine semiconductor bandgap energy directly from the easily measured transmission spectra was developed. The method was verified using many binary semiconductors with known properties and utilized to determine the unknown ternary semiconductors were determined at various wavelengths and temperatures. Photoluminescence and Hall-effect measurement were performed to identify various electronic transitions, as well as sample quality. The determination of electrical and optical properties of the material will provide important addition to the database of material properties for future optoelectronic device applications. In the near future, newer materials and their applications need to be developed, and often binary and ternary III-V compounds GaSb, GaP, GaSbP etc. can be studied using the method developed in this work.

Subject Categories:

  • Inorganic Chemistry
  • Electrical and Electronic Equipment
  • Properties of Metals and Alloys
  • Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE