Accession Number:

ADA537045

Title:

Development of High-k Dielectric for Antimonides and a sub 350 degree Celsius III-V pMOSFET Outperforming Germanium

Descriptive Note:

Conference paper

Corporate Author:

STANFORD UNIV CA DEPT OF ELECTRICAL ENGINEERING

Report Date:

2010-12-01

Pagination or Media Count:

5.0

Abstract:

Insub xGasub 1-xSb channel materials have the highest hole and electron mobility among all III-V semiconductors, high conduction and valence band offsets CBOVBO with lattice matched Alsub xInsub 1-xSb for heterostructure MOSFET design and allow low thermal budget MOSFET fabrication. While buried channel HEMT-like devices with excellent electron and hole transport have been demonstrated, realization of an Sb-channel MOSFET has remained elusive due to the highly reactive nature of the Sb-surface. In this paper we overcome these challenges and fabricate an Insub xGasub 1-xSb pMOSFET with high hole mobility a bottleneck for III-V complimentary logic. Synchrotron Radiation Photoemission Spectroscopy SRPES is used to aid the development of ALD Al2O3 on GaSb with a mid bandgap Dit of 3 x 10to the 11th powercm2eV-1. A pn diode with ideality factor of 1.4 and Isub ONIsub OFF 5 x 10to the 4th power is developed. pMOSFETs with various channel configurations to optimize the hole transport are fabricated using a sub 350 degrees Celsius gate-first process. Surface buried channel pMOSFETs with peak hole mobility of 620 910 cm2Vs and having more than 50 100 higher mobility than Germanium over the entire sheet charge range are demonstrated and analyzed.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE