Accession Number:

ADA535098

Title:

High kappa Dielectrics on InGaAs and GaN: Growth, Interfacial Structural Studies, and Surface Fermi Level Unpinning

Descriptive Note:

Final rept. 23 Sep 2009-22 Oct 2010

Corporate Author:

NATIONAL TSING HUA UNIV HSINCHU (TAIWAN) DEPT OF MATERIALS SCIENCE AND ENGINEERING

Personal Author(s):

Report Date:

2010-12-24

Pagination or Media Count:

14.0

Abstract:

This is the report of a project to grow high dielectric constant oxides on InGaAs and GaN using molecular beam epitaxy and atomic layer deposition.

Subject Categories:

  • Electrical and Electronic Equipment
  • Properties of Metals and Alloys
  • Electricity and Magnetism
  • Atomic and Molecular Physics and Spectroscopy

Distribution Statement:

APPROVED FOR PUBLIC RELEASE