Zinc Selenide-Based Schottky Barrier Detectors for Ultraviolet-A and Ultraviolet-B Detection
NAVAL POSTGRADUATE SCHOOL MONTEREY CA DEPT OF PHYSICS
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Wide-bandgap semiconductors such as zinc selenide ZnSe have become popular for ultraviolet UV photodetectors due to their broad UV spectral response. Schottky barrier detectors made of ZnSe in particular have been shown to have both low dark current and high responsivity. This paper presents the results of electrical and optical characterization of UV sensors based on ZnSeNi Schottky diodes fabricated using single-crystal ZnSe substrate with integrated UV-A 320400 nm and UV-B 280320 nm filters. For comparison, characteristics characterization of an unfiltered detector is also included. The measured photoresponse showed good discrimination between the two spectral bands. The measured responsivities of the UV-A and UV-B detectors were 50mAW and 10mAW, respectively. A detector without a UV filter showed a maximum responsivity of about 110mAW at 375nm wavelength. The speed of the unfiltered detector was found to be about 300 kHz primarily limited by the RC time constant determined largely by the detector area.
- Inorganic Chemistry
- Electrical and Electronic Equipment
- Ultraviolet Detection and Detectors