Si Based Large Area Substrates for HgCdTe Infrared Detectors
Final rept. 1 Sep 2006-31 Jul 2010
AMETHYST RESEARCH INC ARDMORE OK
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Development of a compliant Ge-on-Insulator GeOI substrate for growth of lattice-mismatched films, i.e. InSb and HgCdTe, was targeted. Fabrication combined the demonstrated compliancy of an ultrathin 3 nm Ge film on insulator with nano-engineering of the step structure on vicinal Ge surfaces to yield a substrate with unsurpassed ability to elastically accommodate mismatch strain. Furthermore, since the GeOI growth substrate is Si-based, it is compatible with the wide range of tools for processing Si wafers, and therefore does not poses any inherent size, shape or handling restrictions that would limit its use in manufacturing or scalability to larger-sized wafers. Results to date provide clear evidence of the compliancy of the thin-film GeOI 100 substrate. However, evaluation of growth on a vicinal plane to suppress the formation of anti-phase domains APDs, has not been completed. APDs are formed as a result of growth of a polar film on a non-polar substrate. Growth has been demonstrated on a 6-off 100 GeOI substrate, but development of a 4-off 211 GeOI substrate, as required for growing HgCdTe, has been delayed due to technical issues. These issues have been overcome and efforts continue to demonstrate growth of a HgCdTeCdZnTe heterosturcture.
- Infrared Detection and Detectors