Accession Number:

ADA533167

Title:

Injection Laser Using Rare Earth Doped GaN Thin Films for Visible and Infrared Applications

Descriptive Note:

Final rept. 1 Aug 2006-31 Jan 2010

Corporate Author:

CINCINNATI UNIV OH

Report Date:

2010-05-01

Pagination or Media Count:

129.0

Abstract:

This is a proposal to develop an injection laser on Si using rare-earth doped GaN heteroepitaxially grown on Si substrates. The success of this approach will result in the availability of a laser light sources directly built on Si and operating at wavelengths throughout the visible and near-IR range. We have demonstrated the first ever visible lasing on Si using GaNEu grown on Si with unique AlGaN transition layers by optical pumping. The preliminary results are very encouraging stimulated emission threshold of only 110kWcm2, optical gain of 100cm and loss of 45cm. The proposed program will develop an injection laser based on AlGaN-GaNRE-AlGaN double heterojunction structures built on Si substrates.

Subject Categories:

  • Lasers and Masers

Distribution Statement:

APPROVED FOR PUBLIC RELEASE