Accession Number:

ADA532987

Title:

Optimized (2nd Pass) Gallium Arsenide (GaAs) Integrated Circuit Radio Frequency (RF) Booster Designs for 425 MHz and Dual Band (425 and 900 MHz)

Descriptive Note:

Final rept.

Corporate Author:

ARMY RESEARCH LAB ADELPHI MD SENSORS AND ELECTRON DEVICES DIRECTORATE

Personal Author(s):

Report Date:

2010-11-01

Pagination or Media Count:

96.0

Abstract:

High-performance microwave and radio frequency integrated circuits are of interest to the Army. Several monolithic microwave integrated circuits MMICs were designed to enhance the performance of commercial-off-the-shelf COTS RF integrated circuits RFICs used in many wireless systems. This report documents a set of MMIC designs optimized for the 400 to 450 MHz ultra-high frequency UHF band and a dual band design that also includes 850 to 950 MHz operation. Additional incorporation of discrete matching elements into a single integrated IC will improve size and weight of wireless systems. This is an optimized set of designs based on a previous 1st pass design effort. Ten separate MMIC designs were designed and fabricated.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE