Biologically Self-Assembled Memristive Circuit Elements
STATE UNIV OF NEW YORK AT ALBANY COLL OF NANOSCALE SCIENCE AND ENGINEERING
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Both TiO2 and HfO2 are common materials for semiconductor fabrication that have shown memristive properties. Nanoparticles of these metal oxides have great prospect to provide nanoscale materials with tunable electronic properties for integration in advanced circuits such as neuromorphic networks based on memristive crossbar elements. We seek to take advantage of the unique interaction between the phosphate end-group of DNA and TiO2HfO2 nanoparticles to enable a guided assembly of circuit elements via specific nucleotide sequences in a bottom-up fashion.
- Electrical and Electronic Equipment