Accession Number:

ADA532461

Title:

Formation of Defect Microstructures and Electrical Transport in VOx

Descriptive Note:

Final rept. 1 Jul 2005-30 Jun 2010

Corporate Author:

SRI INTERNATIONAL MENLO PARK CA

Personal Author(s):

Report Date:

2010-06-30

Pagination or Media Count:

39.0

Abstract:

This report summarizes SRIs accomplishments from 070105 to 063010 on the, Formation of Defect Microstructures and Electrical Transport in VOx project. We have successfully carried out all tasks identified in our initial proposal and supplements and gained significant knowledge and understanding of electrical transport, optical properties, and electronic structures in vanadium oxide VOx, the most favored material for uncooled microbolometers, and in related highly disordered systems. We have developed algorithms and quantitative modeling tools that compute a variety of transport properties and their dependence on defect microstructures in VOx. These tools are valuable for identifying VOx with appropriate compositions and defect structures for improved bolometer performance. Some of our results have been published in peer-reviewed journals and presented at professional conferences. In addition, we have established a close collaboration with experimentalists in both academia the Multidisciplinary University Research Initiative MURI team led by Prof. Mark Horn at Pennsylvania State University and industry Dr. A. J. Syllaios from L3 Communications, who have been working on VOx and related systems. We have provided our understanding and physical insights to the experimentalists and helped analyze their experimental measurements. The collaboration with experimentalists has also broadened our research scope and helped us focus on the most relevant issues concerning VOx.

Subject Categories:

  • Inorganic Chemistry
  • Properties of Metals and Alloys
  • Nuclear Physics and Elementary Particle Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE