Accession Number:

ADA532271

Title:

Gallium Nitride UV Single Photon Source

Descriptive Note:

Final rept. 1 Aug 2008-31 Jul 2010

Corporate Author:

GWANGJU INST OF SCIENCE AND TECHNOLOGY (SOUTH KOREA)

Personal Author(s):

Report Date:

2010-11-08

Pagination or Media Count:

48.0

Abstract:

This report documents the development of electrically driven single photon source that operate near room temperature by using epitaxially grown GaN nanostructures. In order to realize the electrically driven single photon source operating near room temperature, we grew high-quality GaN quantum dots embedded in AlN thin films, and fabricate single photon emitting tunnel diodes that have GaN quantum dots in a microcavity structure with nano-sized aperture. Single electron and hole injection, which is the precondition for single photon emission, was driven by using Coulomb blockade effect in GaN quantum dots surrounded by AlN tunnel barriers.

Subject Categories:

  • Electrooptical and Optoelectronic Devices
  • Fabrication Metallurgy
  • Nuclear Physics and Elementary Particle Physics
  • Quantum Theory and Relativity
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE