Classical Gradual-Channel Modeling of Graphene Field-Effect Transistors (FETs)
ARMY RESEARCH LAB ADELPHI MD
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This technical report describes initial efforts, as part of the new Strategic Technology Initiative STI on carbon electronics, to model and simulate the performance of graphene field-effect transistors FETs using macroscopic descriptions that are classical for semiconductor devices. It is argued that the underlying physics that differentiates these devices from their normal semiconductor-based counterparts is most clearly revealed by non-computer-intensive descriptions that allow the designer to compare their behavior with that of their well-studied semiconductor counterparts. Because it admits a reasonable description of both the lateral and vertical field and transport functionality of the FET structure, the gradual-channel approximation is key to this approach. The availability of closed-form solutions to the problem within this approach, in turn, allows small-signal and microwave parameters to be calculated quickly and transparently.
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