High-Electron Mobility Graphene Channel Transistors for Millimeter-Wave Applications
Final rept. 27 Apr 2009-26 Apr 2010
TOHOKU UNIV SENDAI (JAPAN) RESEARCH INST OF ELECTRICAL COMMUNICATION
Pagination or Media Count:
Graphene-channel field effect transistors GFETs on semi-insulating SiC substrates were fabricated and characterized. In the first GFETs, the device exhibits n-type FET operation with the transconductance of 0.1 mSmm at the drain voltage of 0.5 V. The current gain cutoff frequency characterized by S parameter measurement is 0.5 GHz. These characteristics are primarily limited by the low carrier mobility of 50 cm2V.s. evaluated by Hall measurement. Further improvement in the graphene quality and the process technique to avoid the damage on graphene channel will be the key targets of the study in the next year.
- Electrical and Electronic Equipment
- Electricity and Magnetism
- Radiofrequency Wave Propagation