Accession Number:

ADA528076

Title:

High-Electron Mobility Graphene Channel Transistors for Millimeter-Wave Applications

Descriptive Note:

Final rept. 27 Apr 2009-26 Apr 2010

Corporate Author:

TOHOKU UNIV SENDAI (JAPAN) RESEARCH INST OF ELECTRICAL COMMUNICATION

Personal Author(s):

Report Date:

2010-08-31

Pagination or Media Count:

4.0

Abstract:

Graphene-channel field effect transistors GFETs on semi-insulating SiC substrates were fabricated and characterized. In the first GFETs, the device exhibits n-type FET operation with the transconductance of 0.1 mSmm at the drain voltage of 0.5 V. The current gain cutoff frequency characterized by S parameter measurement is 0.5 GHz. These characteristics are primarily limited by the low carrier mobility of 50 cm2V.s. evaluated by Hall measurement. Further improvement in the graphene quality and the process technique to avoid the damage on graphene channel will be the key targets of the study in the next year.

Subject Categories:

  • Electrical and Electronic Equipment
  • Electricity and Magnetism
  • Radiofrequency Wave Propagation

Distribution Statement:

APPROVED FOR PUBLIC RELEASE