Accession Number:

ADA528019

Title:

Approach for Dislocation Free GaN Epitaxy

Descriptive Note:

Journal article

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC ELECTRONICS SCIENCE AND TECHNOLOGY DIV

Report Date:

2010-07-22

Pagination or Media Count:

5.0

Abstract:

The characteristics of confined epitaxial growth are investigated with the goal of determining the contributing effects of mask attributes spacing, feature size and growth conditions VIII ratio, pressure, temperature on the efficiency of the approach for dislocation density reduction of GaN. In addition to standard secondary electron and atomic force microscopy, electron channeling contrast imaging ECCI is employed to identify extended defects over large tens of microns areas. Using this method, it is illustrated that by confining the epitaxial growth, high quality GaN can be grown with dislocation densities approaching zero.

Subject Categories:

  • Electrical and Electronic Equipment
  • Electrooptical and Optoelectronic Devices
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE