Approach for Dislocation Free GaN Epitaxy
NAVAL RESEARCH LAB WASHINGTON DC ELECTRONICS SCIENCE AND TECHNOLOGY DIV
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The characteristics of confined epitaxial growth are investigated with the goal of determining the contributing effects of mask attributes spacing, feature size and growth conditions VIII ratio, pressure, temperature on the efficiency of the approach for dislocation density reduction of GaN. In addition to standard secondary electron and atomic force microscopy, electron channeling contrast imaging ECCI is employed to identify extended defects over large tens of microns areas. Using this method, it is illustrated that by confining the epitaxial growth, high quality GaN can be grown with dislocation densities approaching zero.
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