Microscopic Optical Characterization of Free Standing III-Nitride Substrates, ZnO Bulk Crystals, and III-V Structures for Non-Linear Optics. Part 2
Final rept. 3 Apr 2009-3 Apr 2010
VALLADOLID UNIV (SPAIN)
Pagination or Media Count:
CL study of ammonothermal GaN crystals. Preliminary results on ammonothermal AlGaN crystals show a clear prevalence of deep level luminescence Study of the luminescence spectral characteristics. Optimization of the excitonic emission vs deep level emission. Relation between the CL data and the crystal growth parameters. Study of the surface properties, using variable e-beam kVexcitation. Study of grain boundaries, influence of crystal defects on the Yellow luminescence. Incorporation of cations in different growth sectors of ammonothermal AlGaN crystals. This study targets to supply the crystal growers the relevant parameters necessary to improve the crystalline quality of these crystals suitable for obtaining high quality substrates. CL study of e-irradiated ZnO crystals previously indented, in order determine the interaction between Frenkel pairs and the crystal defects. Thermal treatments in controlled atmospheres influence of the treatments in the distribution of defects. Local studies around grain boundaries in melt grown crystals, identification of defects. This study targets the understanding of the intrinsic defects in ZnO in order to allow p-type doping by controlling the compensating levels.