Accession Number:

ADA523462

Title:

Investigation of Ferromagnetic Semiconductor Devices for Spintronics

Descriptive Note:

Final rept. 15 Apr 2007-1 May 2010

Corporate Author:

NORTHWESTERN UNIV EVANSTON IL

Personal Author(s):

Report Date:

2010-05-01

Pagination or Media Count:

23.0

Abstract:

Spintronic devices are being developed as an alternative to conventional semiconductor devices for many applications including information storage, communications and information processing. Hybrid unipolar devices comprising ferromagnetic metals and semiconductors have been employed to demonstrate spin injection and detection in Si. However, for integration and fabrication of all-semiconductor magnetoelectronic devices, dilute magnetic semiconductors DMS are the most likely candidates, and many possible unipolar and bipolar devices have been already proposed using these materials. In particular the bipolar magnetic junction transistor MJT has been predicted to have unique properties like magneto-amplification MA, which is the change of amplification upon application of an external magnetic field. Here we report on the room-temperature operation of a InMnAs based bipolar magnetic junction transistor. Magnetoamplification is observed for the first time in a bipolar magnetic junction transistor.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE