Accession Number:

ADA523288

Title:

Exploiting the Negative Polarization Properties of Indium Gallium Nitride (InGaN)/Gallium Nitride (GaN) Heterostructures to Achieve Frequency Doubled Blue-green Lasers with Deep Ultraviolet (UV) (<250 nm) Emission

Descriptive Note:

Corporate Author:

ARMY RESEARCH LAB ADELPHI MD

Personal Author(s):

Report Date:

2010-06-01

Pagination or Media Count:

32.0

Abstract:

There is an Army need to develop deep ultraviolet UV semiconductor lasers that are compact with a low power budget for use in real-time reagentless biodetection and identification systems as well as water monitoring. Our approach is to develop a visible indium gallium nitride InGaN based laser that exploits the negative polarization charge at the heterointerface, which can then be frequency doubled into the deep UV. In the first year of this Directors Research Initiative DRI, we have developed and tested single heterostructure SH n-InxGa1-xNp-GaN p-down light emitting diodes LEDs with 22 In composition and having a peak intensity at 485 nm blue-green. Under 1 DC, the current injection peaks above 100 Acm2, well beyond the current density, 10-25 Acm2, at which conventional p-up, Ga-polar InGaNGaN multiple quantum well MQW LEDs exhibit significant efficiency droop. The achievement of a blue-green LED with reduced efficiency droop at high current densities is a necessary step for achieving a blue-green laser that uses the benefits of the negative polarization charge.

Subject Categories:

  • Lasers and Masers

Distribution Statement:

APPROVED FOR PUBLIC RELEASE