Accession Number:

ADA522642

Title:

Rare-earth Doped GaN - An Innovative Path Toward Area-scalable Solid-state High Energy Lasers Without Thermal Distortion (2nd year)

Descriptive Note:

Technical rept.

Corporate Author:

ARMY RESEARCH LAB ADELPHI MD SENSORS AND ELECTRON DEVICES DIRECTORATE

Personal Author(s):

Report Date:

2010-06-01

Pagination or Media Count:

28.0

Abstract:

In situ neodymium Nd doping of gallium nitride GaN and aluminum nitride AlN by plasma-assisted molecular beam epitaxy PA-MBE has been demonstrated for the first time. For GaN, Nd doping as high as 8 at. has been demonstrated, with no evidence of phase segregation identified by x-ray diffraction XRD for Nd up to 1 at.. The strongest roomtemperature luminescence was observed for a doping level between 0.1-1 at.. The Stark energy levels of the three characteristic Nd emission multiplets were resolved by photoluminescence PL and photoluminescence excitation PLE spectroscopy. The enhanced substitutional doping at the gallium Ga site and low optical loss in waveguide structures suggests that GaNNd may have significant potential for use in simple, area-scalable, room-temperature, diode-pumped solidstate high energy lasers HELs. Next-generation devices may be able to take advantage of the improved thermal conductivity of an AlN host.

Subject Categories:

  • Physical Chemistry
  • Electrical and Electronic Equipment
  • Lasers and Masers
  • Atomic and Molecular Physics and Spectroscopy
  • Solid State Physics
  • Radiofrequency Wave Propagation

Distribution Statement:

APPROVED FOR PUBLIC RELEASE