Accession Number:

ADA522406

Title:

Electron Emission from GaN n-p Junctions

Descriptive Note:

Journal article

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC

Report Date:

2002-08-20

Pagination or Media Count:

4.0

Abstract:

We report on electron emission from cesiated GaN n-p junctions in forward bias. Surface electric fields 3 Vum caused a fivefold increase in emission current. Initial maximum currents in excess of 200 nA degrade to 50 nA due to charge trapping but are quickly recovered at zero bias. Energy spectra confirm negative electron affinity 80 h after cesiation, indicate resistive losses limit the emission current, and reveal significant emission at energies above the Fermi level of the injecting contact.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE