Accession Number:

ADA522287

Title:

Metal-Insulator-Metal Diode Process Development for Energy Harvesting Applications

Descriptive Note:

Progress rept. May-Aug 2009

Corporate Author:

ARMY RESEARCH LAB ADELPHI MD SENSORS AND ELECTRON DEVICES DIRECTORATE

Report Date:

2010-04-01

Pagination or Media Count:

30.0

Abstract:

Persistent powering of electronics, sensors, and autonomous systems on the battlefield has become increasingly important to the U.S. Army. Scavenging energy from local environments reduces the required energy and weight transported to the theater. Black-body radiation could potentially provide a 24-hr energy source for Army systems. MicroNano-scale, metal-insulator- metal MIM tunnel diodes will be developed to provide half-wave rectification as part of a rectenna energy harvesting system, which includes a radiation-collecting antenna, a rectifying MIM tunnel diode, and a storage capacitor. This research addresses the development, fabrication, and characterization of high frequency MIM tunnel diodes for power rectification. Planar platinumtitanium-dioxidetitanium stacks were fabricated with the focus of determining the effects of the insulator thickness on the electrical performance. Insulator thicknesses were studied between 2 nm and 50 nm. The metals were chosen for their high work function difference, and the insulator was chosen for its barrier height and availability. Metals and insulator thin films were sputtered onto silicon substrates with silicon dioxide overlayers. I-V measurements were taken using an electrical characterization system to confirm a non-linear, asymmetric response.

Subject Categories:

  • Electrical and Electronic Equipment
  • Properties of Metals and Alloys
  • Manufacturing and Industrial Engineering and Control of Production Systems
  • Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE