Accession Number:

ADA522079

Title:

Magnetic Random Access Memory; Integrated Passive Components

Descriptive Note:

Final rept. 1 Sep 2006-30 Apr 2010

Corporate Author:

IDAHO UNIV MOSCOW DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

Report Date:

2010-06-02

Pagination or Media Count:

34.0

Abstract:

The goal of this research was to develop an embedded magnetic memory technology to be integrated into a Complementary Metal Oxide Semiconductor CMOS fabrication process to provide radiation-hard, nonvolatile data storage. The benefits to spacecraft systems include the ability to power-down a subsystem while retaining system state, thus saving energy until the subsystem is required. This effort produced functioning magnetic tunneling junction MTJ memory cells, but they did not achieve the desired resistance ratio. Two circuit designs were developed based on magnetic memory elements a magnetic latch, and a magnetic shadow memory to serve as a backup to volatile electronic memory. The thrust of this effort is to develop new families of on-chip passive components, particularly inductors and programmable resistors. These supplement the transistors for which CMOS processing technologies are highly optimized. This work resulted in thin-film planar inductors that exhibit 50 greater inductance per unit area by using ferrite cladding contain and shape electromagnetic fields.

Subject Categories:

  • Electrical and Electronic Equipment
  • Electricity and Magnetism
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE