Accession Number:

ADA522063

Title:

Fabrication and Characterization of Wound Capacitors using Amorphous Silicon Dioxide as the Dielectric Material (PREPRINT)

Descriptive Note:

Conference paper, 1 Dec 2007-7 May 2008

Corporate Author:

NANOHMICS INC AUSTIN TX

Report Date:

2008-05-01

Pagination or Media Count:

6.0

Abstract:

Capacitors that perform well at temperatures exceeding 200 degree and have energy densities in excess of 5 Jsq cm are an enabling technology for many applications in automotive, geophysical exploration, aerospace, and the military. To address this need Nanohmics has been developing high energy density, temperature-stable film capacitors fabricated using amorphous silicon dioxide as the dielectric material. Fabrication begins with the deposition of 0.4 micrometers silicon dioxide films on both sides of a 6-12 micrometers metalized flexible polymer substrate to form dielectric-coated electrodes. Next, two coated electrodes are wound together into a cylindrical shape to produce a capacitor. Measurements indicate that capacitors fabricated using amorphous silicon dioxide dielectric has stable capacitance, dissipation factor, and breakdown threshold over a wide temperature range. Energy densities in the 5 10 Jsq cm range are theoretically attainable using these materials and fabrication geometries.

Subject Categories:

  • Inorganic Chemistry
  • Miscellaneous Materials
  • Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE