Accession Number:

ADA522052

Title:

AFOSR Wafer Bonding

Descriptive Note:

Final performance rept.

Corporate Author:

CALIFORNIA UNIV SANTA BARBARA

Personal Author(s):

Report Date:

2009-07-31

Pagination or Media Count:

9.0

Abstract:

The concept of a Bonded Field-Effect Transistor has been successfully demonstrated, using an InGaAsInAlAs MESFET SourceGate region with an InGaNGaN drain region. Bonding other material combinations such as Si-GaP and Si-GaN have been attempted and explored. Material non-uniformity severely impacts the ability of GaN to bond, and several process developments have been made to attempt to overcome this issue. Many possibilities exist for the continued exploration of this new class of devices, promising both high-frequency and high-voltage operation.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE