Accession Number:

ADA522030

Title:

Collaborative Research and Development (CR&D). Task Order 0050: Molecular Beam Epitaxial Growth Studies for Optimization of Antimonide Based Heterostructures

Descriptive Note:

Final rept. 19 May 2006-31 Jan 2008

Corporate Author:

UNIVERSAL TECHNOLOGY CORP DAYTON OH

Personal Author(s):

Report Date:

2008-05-01

Pagination or Media Count:

15.0

Abstract:

This research in support of the Air Force Research Laboratory Materials and Manufacturing Directorate was conducted from 19 May 2006 through 31 January 2008. This task worked to develop and optimize molecular beam epitaxy of antimonide-based heterostructures for infrared and terahertz sensor applications. It established the growth and processing conditions necessary for smooth and abrupt interfacial layers in the heterostructure and for reduction of material defects. The optimized growth and processing conditions are detailed in the task final report. There is an increasing demand for uncooled mid-infrared detectors for military applications, therefore recent research task was focused on developing reliable uncooled mid-IR detectors using InAsGaSb superlattice materials. Approximately 200 samples were grown in this task period using in-house molecular beam epitaxy system, and analyzed by several characterization techniques available in-house or corroborated with local universities around the base.

Subject Categories:

  • Crystallography
  • Infrared Detection and Detectors

Distribution Statement:

APPROVED FOR PUBLIC RELEASE