Dynamics of Forward Voltage Drift in 4H-SiC PiN Diodes
NAVAL RESEARCH LAB WASHINGTON DC ELECTRONICS SCIENCE AND TECHNOLOGY DIV
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4H-silicon carbide SiC is desired for electronic devices designed to be operated at high temperatures or at high electric powers. However, difficulties in the growth of high-purity, low defect density substrates and epitaxial layers have limited the use of SiC in commercial and military applications. One such impediment is the nucleation and expansion of Shockley stacking faults SSFs during forward-bias device operation stressing, which induces an undesirable increase in the forward voltage drop Vf. While efforts have been made to reduce the number of SSFs within a given device, these defects continue to provide a significant technological hurdle to the commercialization of 4H-SiC electronic devices, most especially for larger-area power devices that require close to defect-free active regions.
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