Accession Number:

ADA517995

Title:

Dynamics of Forward Voltage Drift in 4H-SiC PiN Diodes

Descriptive Note:

Journal article

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC ELECTRONICS SCIENCE AND TECHNOLOGY DIV

Report Date:

2008-01-01

Pagination or Media Count:

4.0

Abstract:

4H-silicon carbide SiC is desired for electronic devices designed to be operated at high temperatures or at high electric powers. However, difficulties in the growth of high-purity, low defect density substrates and epitaxial layers have limited the use of SiC in commercial and military applications. One such impediment is the nucleation and expansion of Shockley stacking faults SSFs during forward-bias device operation stressing, which induces an undesirable increase in the forward voltage drop Vf. While efforts have been made to reduce the number of SSFs within a given device, these defects continue to provide a significant technological hurdle to the commercialization of 4H-SiC electronic devices, most especially for larger-area power devices that require close to defect-free active regions.

Subject Categories:

  • Electrical and Electronic Equipment
  • Manufacturing and Industrial Engineering and Control of Production Systems
  • Crystallography
  • Electricity and Magnetism
  • Industrial Chemistry and Chemical Processing

Distribution Statement:

APPROVED FOR PUBLIC RELEASE