Accession Number:

ADA517986

Title:

Lifetime Limiting Defects in 4H-SiC

Descriptive Note:

Journal article

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC ELECTRONICS SCIENCE AND TECHNOLOGY DIV

Report Date:

2008-01-01

Pagination or Media Count:

3.0

Abstract:

Efforts are under way to develop electrical power systems for Naval vessels and aircraft to be controlled by small, efficient, and reliable solid-state electronic devices, such as high-power 10 kV switching diodes. This has provoked significant interest in advancing technology based on 4H-SiC, as this semiconductor is much more capable of withstanding the required high power densities than is Si, which has been the standard material for these applications. Development of these devices requires that the SiC material be of sufficient purity, since defects alterations from the perfect periodic lattice of Si and C atoms can trap mobile charge carriers electrons or holes, thus causing degradation of important electrical properties, such as the average lifetime of the minority carriers. In order to reduce the concentration of these defects or traps, it is important to determine their chemical structure, so that appropriate strategies may be applied during or after material growth to minimize their incorporation.

Subject Categories:

  • Inorganic Chemistry
  • Electricity and Magnetism
  • Atomic and Molecular Physics and Spectroscopy
  • Nuclear Physics and Elementary Particle Physics
  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE