Accession Number:

ADA517873

Title:

Mobility Enhancement in Strained Antimonide Quantum Wells

Descriptive Note:

Journal article

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC

Report Date:

2008-01-01

Pagination or Media Count:

4.0

Abstract:

Low-power electronics is essential for a number of military and commercial applications. Previous work at NRL has demonstrated high-performance, low-power, antimonide-based compound semiconductor transistors. In these devices, InAs is used as an electron channel with mobilities as high as 30,000 cm2V-s at room temperature. This work has been transitioned to industry for analog applications, resulting in X-band and W-band low-noise amplifiers with record low power consumption a factor of 3 and 10 lower than InP- and GaAs-based amplifiers, respectively. For digital and mixed-signal applications, power consumption can be minimized by designing circuits with complementary nelectron- and phole-channel transistors. These circuits consume negligible power except when being switched. Military applications for this technology are expected to include high-speed analog-to-digital conversion for high-performance radar and miniature air vehicles MAVs, autonomous sensing, and application-specific integrated circuits ASICs.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE