Mobility Enhancement in Strained Antimonide Quantum Wells
NAVAL RESEARCH LAB WASHINGTON DC
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Low-power electronics is essential for a number of military and commercial applications. Previous work at NRL has demonstrated high-performance, low-power, antimonide-based compound semiconductor transistors. In these devices, InAs is used as an electron channel with mobilities as high as 30,000 cm2V-s at room temperature. This work has been transitioned to industry for analog applications, resulting in X-band and W-band low-noise amplifiers with record low power consumption a factor of 3 and 10 lower than InP- and GaAs-based amplifiers, respectively. For digital and mixed-signal applications, power consumption can be minimized by designing circuits with complementary nelectron- and phole-channel transistors. These circuits consume negligible power except when being switched. Military applications for this technology are expected to include high-speed analog-to-digital conversion for high-performance radar and miniature air vehicles MAVs, autonomous sensing, and application-specific integrated circuits ASICs.
- Electrical and Electronic Equipment