Metal Induced Growth of Si Thin Films and NiSi Nanowires
Final performance rept. 1 Dec 2006-30 Nov 2009
NEW YORK STATE UNIV RESEARCH FOUNDATION AMHERST NY
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Thin film silicon has many useful purposes. Among the applications are solar cells and thin film transistors. This project involves a new and potentially lower cost method to produce thin silicon films. The method is called metal induced growth MIG. A thin catalyst metal layer deposited on a foreign low cost substrate serves as the basis for growth of a nanocrystalline silicon thin film with thickness of 5-10 microns and preferred orientation of 220. The silicon deposition by magnetron sputtering on the heated substrate resulted in columnar structured grains having a diameter up to about 0.5 microns. Schottky barrier solar cells fabricated on these films gave a photocurrent of about 5 mAsq cm and open circuit voltage of 0.25 volts. A modified process gave NiSi crystalline nanowires with length up to 10 microns and diameter of about 50 nm.
- Inorganic Chemistry
- Electrical and Electronic Equipment
- Electric Power Production and Distribution