Accession Number:

ADA517029

Title:

Metal Induced Growth of Si Thin Films and NiSi Nanowires

Descriptive Note:

Final performance rept. 1 Dec 2006-30 Nov 2009

Corporate Author:

NEW YORK STATE UNIV RESEARCH FOUNDATION AMHERST NY

Personal Author(s):

Report Date:

2010-02-25

Pagination or Media Count:

15.0

Abstract:

Thin film silicon has many useful purposes. Among the applications are solar cells and thin film transistors. This project involves a new and potentially lower cost method to produce thin silicon films. The method is called metal induced growth MIG. A thin catalyst metal layer deposited on a foreign low cost substrate serves as the basis for growth of a nanocrystalline silicon thin film with thickness of 5-10 microns and preferred orientation of 220. The silicon deposition by magnetron sputtering on the heated substrate resulted in columnar structured grains having a diameter up to about 0.5 microns. Schottky barrier solar cells fabricated on these films gave a photocurrent of about 5 mAsq cm and open circuit voltage of 0.25 volts. A modified process gave NiSi crystalline nanowires with length up to 10 microns and diameter of about 50 nm.

Subject Categories:

  • Inorganic Chemistry
  • Electrical and Electronic Equipment
  • Electric Power Production and Distribution

Distribution Statement:

APPROVED FOR PUBLIC RELEASE