Accession Number:

ADA516598

Title:

Threshold Voltage Tuning of Metal-Gate MOSFET Using an Excimer Laser

Descriptive Note:

Final rept.

Corporate Author:

SPACE AND NAVAL WARFARE SYSTEMS COMMAND SAN DIEGO CA

Personal Author(s):

• Lu, R. P.
• Ramirez, A. D.
• Offord, B. W.
• Russell, S. D.

Report Date:

2010-03-01

Pagination or Media Count:

11.0

Abstract:

This report presents a localized method for tuning the threshold voltages Vt of multilayer metal-gate MOSFET devices with a spatial area theoretically limited by the wavelength of the laser beam. This technique allows an independent means to tailor threshold voltage on a device-to-device basis that provides greater design flexibility. This maskless technique allows tailoring of thresholds by tuning the work function of the gate by intermixing titanium and titanium nitride using a laser pulse. The source and drains of the MOSFET are simultaneously annealed by the laser.

Descriptors:

• *PULSED LASERS
• *TUNING
• *VOLTAGE
• *MOSFET SEMICONDUCTORS
• NITRIDES
• MISSIONS
• MICROELECTRONICS
• WORK FUNCTIONS
• TITANIUM
• GATES(CIRCUITS)
• THRESHOLD EFFECTS
• ANNEALING
• SPATIAL DISTRIBUTION
• LASER BEAMS

Subject Categories:

• Electrical and Electronic Equipment
• Lasers and Masers

Distribution Statement:

APPROVED FOR PUBLIC RELEASE