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Threshold Voltage Tuning of Metal-Gate MOSFET Using an Excimer Laser
SPACE AND NAVAL WARFARE SYSTEMS COMMAND SAN DIEGO CA
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This report presents a localized method for tuning the threshold voltages Vt of multilayer metal-gate MOSFET devices with a spatial area theoretically limited by the wavelength of the laser beam. This technique allows an independent means to tailor threshold voltage on a device-to-device basis that provides greater design flexibility. This maskless technique allows tailoring of thresholds by tuning the work function of the gate by intermixing titanium and titanium nitride using a laser pulse. The source and drains of the MOSFET are simultaneously annealed by the laser.
APPROVED FOR PUBLIC RELEASE