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Accession Number:
ADA516449
Title:
Three Dimensional Positron Annihilation Momentum Measurement Technique Applied to Measure Oxygen-Atom Defects in 6H Silicon Carbide
Descriptive Note:
Doctoral thesis
Corporate Author:
AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH GRADUATE SCHOOL OF ENGINEERING AND MANAGEMENT
Report Date:
2010-03-01
Pagination or Media Count:
198.0
Abstract:
A three-dimensional Positron Annihilation Spectroscopy System 3DPASS capable to simultaneously measure three-dimensional electron-positron momentum densities measuring photons derived from annihilation events was designed and characterized. 3DPASS simultaneously collects a single data set of correlated energies and positions for two coincident annihilation photons using solid-state double-sided strip detectors DSSD. Positions of photons were determined using an interpolation method which measures a figure-of-merit proportional to the areas of transient charges induced on both charge collection strips directly adjacent to the charge collection strips interacting with the annihilation photons. The subpixel resolution was measured for both double-sided strip detectors DSSD and quantified using a new method modeled after a Gaussian point-spread function with a circular aperture. Error associated with location interpolation within an intrinsic pixel in each of the DSSDs, the subpixel resolution, was on the order of 0.20 mm this represents one-standard deviation. The subpixel resolution achieved was less than one twenty-fifth of the 25-mm2 square area of an intrinsic pixel created by the intersection of the DSSDs orthogonal charge collection strips. The 2D ACAR and CDBAR response for single-crystal copper and 6H silicon carbide 6H SiC was compared with results in the literature. Two additional samples of 6H SiC were irradiated with 24 MeV O ions, one annealed and one un-annealed, and measured using 3DPASS. Three-dimensional momentum distributions with correlated energies and coincident annihilation photons positions were presented for all three 6H SiC samples. 3DPASS was used for the first experimental PAS measurement of the structure of oxygen defects in bulk 6H SiC.
Distribution Statement:
APPROVED FOR PUBLIC RELEASE
