Accession Number:

ADA513483

Title:

Relation Between Structural and Optical Properties of InN and InxGa1-xN Thin Films

Descriptive Note:

Corporate Author:

CALIFORNIA UNIV BERKELEY LAWRENCE BERKELEY LAB

Report Date:

2009-01-01

Pagination or Media Count:

4.0

Abstract:

Transmission Electron Microscopy TEM and optical measurements obtained from InN and InN-xGaxN films 0 x 0.54 grown by Molecular Beam Epitaxy are presented. Energy gaps measured by absorption, PR, and PL for InN films grown on c-plane Al2O3 were in the range of 0.7 eV. No In or other inclusions were observed in these films, ruling out the possibility of a strong Mie scattering mechanism. In the InN-xGaxN films the relationship between the structural properties and the optical properties, in particular the presence or absence of a Stokes shift between absorption and PL, is discussed. TEM studies show that high quality layers do not have a Stokes shift. Some films had compositional ordering these films also showed a shift between absorption edge and luminescence peak.

Subject Categories:

  • Inorganic Chemistry
  • Electrooptical and Optoelectronic Devices
  • Test Facilities, Equipment and Methods

Distribution Statement:

APPROVED FOR PUBLIC RELEASE