Relation Between Structural and Optical Properties of InN and InxGa1-xN Thin Films
CALIFORNIA UNIV BERKELEY LAWRENCE BERKELEY LAB
Pagination or Media Count:
Transmission Electron Microscopy TEM and optical measurements obtained from InN and InN-xGaxN films 0 x 0.54 grown by Molecular Beam Epitaxy are presented. Energy gaps measured by absorption, PR, and PL for InN films grown on c-plane Al2O3 were in the range of 0.7 eV. No In or other inclusions were observed in these films, ruling out the possibility of a strong Mie scattering mechanism. In the InN-xGaxN films the relationship between the structural properties and the optical properties, in particular the presence or absence of a Stokes shift between absorption and PL, is discussed. TEM studies show that high quality layers do not have a Stokes shift. Some films had compositional ordering these films also showed a shift between absorption edge and luminescence peak.
- Inorganic Chemistry
- Electrooptical and Optoelectronic Devices
- Test Facilities, Equipment and Methods