Accession Number:

ADA513479

Title:

Silicon Carbide as a Platform for Power Electronics

Descriptive Note:

Journal article

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC

Personal Author(s):

Report Date:

2009-06-12

Pagination or Media Count:

4.0

Abstract:

For high-voltage, high-current devices that can be operated at elevated temperatures, silicon carbide SiC has been the material of choice. Efforts to produce single-crystal SiC began 30 years ago, but intrinsic problems in growing high-quality single-crystal boules free of micropipe defects-micrometer-scale pinholes created by dislocation-have only recently been overcome. A series of developments in crystal growth have made large-area, high-quality SiC substrates readily available for applications such as high-frequency transmitters and solid-state white lighting. Additional reductions in defects in the active region of devices have been achieved through epitaxial approaches, in which single-crystal layers are grown on the substrate. SiC is now poised as the linchpin to green energy that will replace less energy-efficient switches now based on silicon technology.

Subject Categories:

  • Inorganic Chemistry
  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE