The Structural Quality of AlxGa1-xN Epitaxial Layers Grown by Digitally-Alloyed Modulated Precursor Epitaxy Determined by Transmission Electron Microscopy
CALIFORNIA UNIV BERKELEY LAWRENCE BERKELEY LAB
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AlxGa1-xN layers of varying composition 0.5 xAl 1.0 grown in the digitally-alloyed modulated precursor epitaxial regime employing AlN and GaN binary sub-layers by metal organic chemical vapor deposition on AlN templates were characterized by transmission electron microscopy techniques. Fine lamellae were observed in bright field images that indicate a possible variation in composition due to the modulated nature of growth. In higher Ga content samples xAl 0.75, a compositional inhomogeniety associated with thicker island regions was observed, which is determined to be due to large Ga-rich areas formed at the base of the layer. Possible causes for the separation of Ga-rich material are discussed in the context of the growth regime used.
- Solid State Physics