Accession Number:

ADA513084

Title:

The Structural Quality of AlxGa1-xN Epitaxial Layers Grown by Digitally-Alloyed Modulated Precursor Epitaxy Determined by Transmission Electron Microscopy

Descriptive Note:

Corporate Author:

CALIFORNIA UNIV BERKELEY LAWRENCE BERKELEY LAB

Report Date:

2009-03-02

Pagination or Media Count:

15.0

Abstract:

AlxGa1-xN layers of varying composition 0.5 xAl 1.0 grown in the digitally-alloyed modulated precursor epitaxial regime employing AlN and GaN binary sub-layers by metal organic chemical vapor deposition on AlN templates were characterized by transmission electron microscopy techniques. Fine lamellae were observed in bright field images that indicate a possible variation in composition due to the modulated nature of growth. In higher Ga content samples xAl 0.75, a compositional inhomogeniety associated with thicker island regions was observed, which is determined to be due to large Ga-rich areas formed at the base of the layer. Possible causes for the separation of Ga-rich material are discussed in the context of the growth regime used.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE