Accession Number:

ADA513050

Title:

Defect Doping of InN

Descriptive Note:

Research paper

Corporate Author:

CALIFORNIA UNIV BERKELEY LAWRENCE BERKELEY LAB

Report Date:

2008-04-28

Pagination or Media Count:

4.0

Abstract:

InN films grown by molecular beam epitaxy have been subjected to 2 MeV He irradiation followed by thermal annealing. Theoretical analysis of the electron mobilities shows that thermal annealing removes triply charged donor defects, creating films with electron mobilities approaching those predicted for uncompensated, singly charged donors. Optimum thermal annealing of irradiated InN can be used to produce samples with electron mobilities higher than those of as-grown films. We have shown that rapid thermal annealing of irradiated InN produces films with high electron mobilities, and recovers photoluminescence. This result may be attributed to the removal of triply charged, relaxed indium vacancies and the stability of singly charged nitrogen vacancies.

Subject Categories:

  • Manufacturing and Industrial Engineering and Control of Production Systems
  • Crystallography
  • Nuclear Physics and Elementary Particle Physics
  • Solid State Physics
  • Thermodynamics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE