Accession Number:

ADA512665

Title:

A Testbed for Technology Characterization

Descriptive Note:

Master's thesis

Corporate Author:

NORTH CAROLINA STATE UNIV AT RALEIGH DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

Report Date:

2009-01-01

Pagination or Media Count:

92.0

Abstract:

As feature sizes continue to decrease, fundamental properties of MOSFET devices begin to hinder the performance gains from one generation to another. The advent of the Tunneling Field Effect Transistor TFET provides hope for continued reduction in feature size whilst solving some of the scaling issues such as leakage current. The purpose of this work is to discuss key metrics that help to quantify the improvements among technology nodes, specifically a comparison between TFETs and traditional MOSFETs. Test structures that allow for the measurement of on and off current, device speed, variation as it relates to on current and threshold voltage, as well as SRAM yield and bitcell read and write noise margins are discussed. In addition, a slight modification to a rapid characterization test structure used to measure threshold variation is proven to help reduce leakage seen within the test structure. Lastly, the structures are fabricated in a 90nm bulk and a 45nm SOI process and measurements from the 90nm bulk process are presented.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE