Accession Number:

ADA512631

Title:

Development of GaN-Based Nanostructure Photon Emitters

Descriptive Note:

Project final rept. 1 Sep 2008-31 Aug 2009

Corporate Author:

NATIONAL CHIAO TUNG UNIV HSINCHU (TAIWAN) INST OF ELECTRO-OPTICAL ENGINEERING

Personal Author(s):

Report Date:

2009-12-19

Pagination or Media Count:

11.0

Abstract:

This is the report of research to develop and establish a viable new epitaxial growth technique with better thickness control, low defect density, and high quality epitaxial film for use in growth of photonic emitters.

Subject Categories:

  • Inorganic Chemistry
  • Electricity and Magnetism
  • Nuclear Physics and Elementary Particle Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE