Atomic Layer Deposition Enabled Interconnect Technology for Vertical Nanowire Arrays
COLORADO UNIV AT BOULDER DEPT OF MECHANICAL ENGINEERING
Pagination or Media Count:
We have demonstrated an atomic layer deposition ALD enabled interconnect technology for vertical, c-axis oriented gallium nitride GaN nanowire NW, 5-10 um in length, 80-200 nm in diameter arrays encapsulated by Benzocyclobutene BCB. The nano-scaled ALD multilayer is essential to provide conformal co-axial dielectric ALDalumina conductor ALD-tungsten coverage and precise thickness control for nanowire metallization. Furthermore, we have successfully developed a fabrication process to locally remove and connect tungsten W interconnect on NWs. Cross-sectional image taken in a focused ion beam FIB tool confirms the conformality of ALD interconnects. Photoluminescence PL wavelengths of the nanowires array can be tuned dynamically by changing the input current supplied to ALD-tungsten interconnect which heats nanowires. Such an experiment also demonstrated the quality of interconnect. This interconnect technology can be applied to various vertical nanowire-based devices, such as nanowire light emitting diodes LEDs, nanowire-based field effect transistors FETs, resonators, batteries or biomedical applications.
- Electrical and Electronic Equipment
- Metallurgy and Metallography