Accession Number:

ADA512277

Title:

Guest Editorial: Quantum Dots

Descriptive Note:

Journal article

Corporate Author:

ARMY RESEARCH OFFICE RESEARCH TRIANGLE PARK NC

Personal Author(s):

Report Date:

2009-06-24

Pagination or Media Count:

3.0

Abstract:

Advances in quantum dot QD waveguides, lasers, photodetectors, and growthsynthesis technologies are the subject of this special section. The development of Stranski-Krastanow strain-layer QDs has led to the emergence of low-threshold and moderate to high bandwidth semiconductor lasers in the 0.85- to 1.5-mm wavelength range mainly based on the InGaAs system. Advances such as lower threshold, improved temperature performance, and high modulation bandwidths have been reported. Advances in epitaxially grown QD uniformity and density led to laser companies such as QD Laser of Tokyo, a Joint Venture of Fujitsu and Mitsui Venture Capital Corp., spun-off from Arakawas group at the University of Tokyo. Innolume is another company based on epitaxially grown QD technology for lasers and semiconductor optical amplifiers SOAs spun-off from research in the past 16 years.

Subject Categories:

  • Lasers and Masers
  • Electrooptical and Optoelectronic Devices
  • Quantum Theory and Relativity

Distribution Statement:

APPROVED FOR PUBLIC RELEASE