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InP-based Long Wavelength Sources for Solid State Lasers Pumping

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Conference paper

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For GaAs-based diode lasers DL operating in the 790 - 980 nm range, major power limitations are associated with catastrophic optical degradation COD of mirror facets and, measurably, other reliability issues. Reliability concerns do not limit the performance of InP-based diode lasers to such a large extent. The maximum power for these devices is determined by the initial, near-threshold differential efficiency etasub d-max and the rate of etasub d-max reduction with increasing pump current P-I characteristic rollover. Rollover effect is negligible in GaAs-based lasers since the Tsub 0 and Tsub 1 parameters characterizing the temperature dependencies of the threshold and etasub d are much higher than those for InP-based emitters. Rollover power limitation can be reduced by using devices with long cavity length, provided the internal optical losses alpha sub int are low and etasub d-max does not decrease considerably with increasing cavity length. Therefore, alphasub int reduction is a key to achieving high-power InP-based diode lasers. The absorption loss analysis in InP lasers 1 shows that the absorption by free holes in the p-InP cladding layer and in Quantum Wells QW are the major loss mechanisms. So far, three approaches have been used to reduce absorption losses i the thickness of undoped waveguide was increased up to 1300 nm to prevent the lasing mode penetration into the p-doped cladding layer Broad Waveguide design 2 ii stepped acceptor doping profile in p-InP cladding was used in structures with narrow waveguide 3,4 iii the number of QW was reduced from 3 to 2 in the last version of the narrow waveguide structures 4. In this paper we present the parameters of recently developed InGaAsPInP single element lasers and diode laser arrays emitting at approx 1850 nm and approx. 1450 nm. For fabrication of 1850-nm emitters the structure with total waveguide thickness W1000 nm Fig. 1 was used.

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  • Lasers and Masers

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