Accession Number:

ADA510151

Title:

Contacts to Semiconductor Nanowires

Descriptive Note:

Final rept. 15 Jun 2005-14 Jun 2009

Corporate Author:

PENNSYLVANIA STATE UNIV UNIVERSITY PARK OFFICE OF SPONSORED PROGRAMS

Personal Author(s):

Report Date:

2009-10-03

Pagination or Media Count:

17.0

Abstract:

Metal contacts to semiconductor nanowires share similarities with their thin-film counterparts, but they also exhibit important differences due to geometry. For example, in the formation of platinum silicide contacts to silicon nanowires, it is possible to achieve uniform platinum silicidesilicon segmented nanowires, but some ratios of platinum to silicon and annealing conditions lead to a peculiar kinking of the nanowires not analogous to the thin-film case. Also interesting is the effect of geometry on Schottky barrier contacts to semiconductor nanowires.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE