Characterization of HVPE-Grown Thick GaAs Structures for IR and THz Generation
AIR FORCE RESEARCH LAB HANSCOM AFB MA SENSORS DIRECTORATE
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In a previous paper, we described a method for growing thick epitaxial layers of GaAs on orientation-patterned wafers by low pressure hydride vapor phase epitaxy. The low pressure method allows for rapid growth at rates well above 100 micronshr and layers up to 1 mm thick have been successfully produced. In this paper we present characterization of these layers by optical microscopy, Hall measurement, and cathodoluminescence imaging. We demonstrate growth of low free carrier concentration, mm-thick orientation-patterned GaAs for efficient nonlinear optical conversion.
- Solid State Physics