Accession Number:

ADA503475

Title:

Laboratory Instrumentation Design Research for Scalable Next Generation Epitaxy: Non-Equilibrium Wide Application Epitaxial Patterning by Intelligent Control (NEW-EPIC). Volume 1. 3D Composition/Doping Control via Micromiror Patterned Deep UV Photodesorption: Revolutionary in situ Characterization/Control

Descriptive Note:

Final rept. 15 May 2003-14 Feb 2009

Corporate Author:

GEORGIA INST OF TECH ATLANTA SCHOOL OF ELECTRICAL AND COMPUTER ENGINEERING

Report Date:

2009-02-19

Pagination or Media Count:

30.0

Abstract:

A novel UV-assisted MOMBE system has been developed enabling intense UV irradiation of films during growth. High quality, heavily unintentionally carbon-doped GaN is successfully grown by NH3-based MOMBE and for the first time InGaN, AlGaN, and magnesium-doped GaN are demonstrated by NH3-based MOMBE. Intense UV irradiation of films during NH3-based MOMBE significantly enhances photo-desorption of species during the growth process, subsequently affecting the resultant InGaN alloy composition, carbon dopant concentration, or magnesium dopant concentration. A digital micromirror device is introduced to pattern incident UV radiation during InGaN growth, demonstrating that the effects of photoexcitation during MOMBE which have been proposed, discovered, and identified by this work indeed can be leveraged to deposit an InGaN film that is compositionally patterned within the growth plane. The results demonstrate that the new approach presented herein is possible for the 3D Epitaxy 3DE of III-Nitrides if additional challenges in practical implementation can be overcome.

Subject Categories:

  • Physical Chemistry
  • Metallurgy and Metallography
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE