Accession Number:

ADA499619

Title:

Theory and Operation of Cold Field-effect Transistor (FET) External Parasitic Parameter Extraction

Descriptive Note:

Final rept.

Corporate Author:

ARMY RESEARCH LAB ADELPHI MD SENSORS AND ELECTRON DEVICES DIRECTORATE

Report Date:

2009-05-01

Pagination or Media Count:

22.0

Abstract:

The design of monolithic microwave integrated circuits MMIC is dependent on the ability to generate accurate device models. Prior knowledge of the external parasitic components is required to determine the small-signal model of the intrinsic device. In this report, we describe a technique and its implementation for extracting external device parasitics. The term cold field-effect transistor FET refers to measurements taken when the drain is at the same voltage as the source.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE