Accession Number:

ADA496070

Title:

Design, Fabrication and Characterization of High-Performance Silicon Nanowire Transistors

Descriptive Note:

Conference paper

Corporate Author:

GEORGE MASON UNIV FAIRFAX VA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Report Date:

2008-08-01

Pagination or Media Count:

5.0

Abstract:

We report the fabrication and characterization of double-gated Si nanowire field effect transistors with excellent current-voltage characteristics, low subthreshold slope 85 mVdec and high onoff current ratio 10exp 6. The Si nanowire devices are fabricated by using a self-aligned technique with standard photolithographic alignment and metal lift-off processes, enabling the large-scale integration of high-performance nanowire devices. We have also studied the effect of device structure and forming gas rapid thermal annealing on the nanowire transistors electrical properties. We conclude that the self-aligned fabrication and non-overlapped gate-sourcedrain structure combined with appropriate post annealing leads to the excellent observed device performance.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE