Accession Number:

ADA495426

Title:

Terahertz Diode Development

Descriptive Note:

Final rept. 1 Jan 2004-31 Dec 2008

Corporate Author:

CORNELL UNIV ITHACA NY OFFICE OF SPONSORED PROGRAMS

Report Date:

2009-03-23

Pagination or Media Count:

24.0

Abstract:

The research efforts to develop a high-efficiency, moderate power THz device are discussed. The device structure is based upon the crystalline properties of GaN and its ability to handle large power and high fields. Physical device models were developed that include thermal and electrical simulations. Several device structures were produced in conjunction with the model development Initial negative differential conduction results from fabricated devices are presented as are the designs of co-planar resonant structures suitable for THzemission.

Subject Categories:

  • Inorganic Chemistry
  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE